X-On Electronics has gained recognition as a prominent supplier of 1N8035-GA Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N8035-GA Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1N8035-GA GeneSiC Semiconductor

1N8035-GA electronic component of GeneSiC Semiconductor
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Part No.1N8035-GA
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Silicon Carbide Schottky 650 V 14.6A Surface Mount TO-276
Datasheet: 1N8035-GA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 10
Multiples : 1
10 : USD 238.0136
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Obsolete
   
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We are delighted to provide the 1N8035-GA from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N8035-GA and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N8035-GA High Temperature Silicon Carbide V = 650 V RRM Power Schottky Diode I = 45 A F (Tc=25C) Q = 66 nC C Features Package 650 V Schottky rectifier RoHS Compliant 210 C maximum operating temperature Zero reverse recovery charge Superior surge current capability PIN 1 3 Positive temperature coefficient of V 1 F PIN 3 Temperature independent switching behavior Lowest figure of merit Q /I C F Available screened to Mil-PRF-19500 SMD0.5 / TO 276 (Hermetic Package) Advantages Applications High temperature operation Down Hole Oil Drilling Improved circuit efficiency (Lower overall cost) Geothermal Instrumentation Low switching losses Solenoid Actuators Ease of paralleling devices without thermal runaway General Purpose High-Temperature Switching Smaller heat sink requirements Amplifiers Industrys lowest reverse recovery charge Solar Inverters Industrys lowest device capacitance Switched-Mode Power Supply (SMPS) Ideal for output switching of power supplies Power Factor Correction (PFC) Best in class reverse leakage current at operating temperature Maximum Ratings at T = 210 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 650 V RRM T = 25 C Continuous forward current I C 45 A F Continuous forward current I T 190 C 14.6 A F C RMS forward current I T 190 C 26 A F(RMS) C Surge non-repetitive forward current, Half Sine I T = 25 C, t = 10 ms 140 A F,SM C P Wave T = 25 C, t = 10 s Non-repetitive peak forward current I C P 650 A F,max 2 2 2 T = 25 C, t = 10 ms I t value i dt C P 98 A S Power dissipation P T = 25 C 453 W tot C Operating and storage temperature T , T -55 to 210 C j stg Electrical Characteristics at T = 210 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 15 A, T = 25 C 1.5 F j Diode forward voltage V V F I = 15 A, T = 210 C 2.2 F j V = 650 V, T = 25 C R j 1 5 Reverse current I A R V = 650 V, T = 210 C R j 50 200 I I F F,MAX Total capacitive charge Q V = 400 V 66 nC C R dI /dt = 200 A/s F Switching time t V = 400 V < 49 ns s R T = 210 C j V = 1 V, f = 1 MHz, T = 25 C 1107 R j Total capacitance C V = 400 V, f = 1 MHz, T = 25 C 103 pF R j V = 650 V, f = 1 MHz, T = 25 C R j 99 Thermal Characteristics Thermal resistance, junction - case R 0.49 C/W thJC Mechanical Properties Mounting torque M 0.6 Nm Dec 2014 1N8035-GA Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Characteristics Dec 2014

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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