DB103G GeneSiC Semiconductor

DB101G thru DB104G V = 50 V - 400 V RRM Single Phase Glass Passivated I = 1 A O Silicon Bridge Rectifier Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High surge current capability DB Package Small size, simple installation Types from 50 V up to 400 V V RRM Not ESD Sensitive Mechanical Data Case: Molded plastic Terminals: Plated terminals, solderable per MIL-STD- 202, Method 208 Polarity: Polarrity symbols marked on the body Mounting position: Any Maximum ratings at Tc = 25 C, unless otherwise specified Parameter Symbol Conditions DB101G DB102G DB103G DB104G Unit Repetitive peak reverse voltage V 50 100 200 400 V RRM V 140 280 RMS reverse voltage 35 70 V RMS DC blocking voltage V 50 100 200 400 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T Storage temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions DB101G DB102G DB103G DB104G Unit Maximum average forward I T = 40 C 1.0 1.0 a 1.0 1.0 A O rectified current I t = 8.3 ms, half sine 30 30 Peak forward surge current p 30 30 A FSM Maximum instantaneous V I = 1.0 A 1.1 1.1 1.1 1.1 V F F forward voltage drop T = 25 C 5 5 5 5 Maximum DC reverse current at a I A R rated DC blocking voltage T = 125 C 500 500 500 500 a C 25 25 25 25 pF Typical junction capacitance j R C/W JC Typical thermal resistance 20 20 20 20 1 Oct. 2018 DB101G thru DB104G 2 Oct. 2018