DB155G thru DB157G V = 600 V - 1000 V RRM Single Phase Glass Passivated I = 1.5 A O Silicon Bridge Rectifier Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique DB Package High surge current capability Small size, simple installation Types from 600 V up to 1000 V V RRM Not ESD Sensitive Mechanical Data Case: Molded plastic Terminals: Plated terminals, solderable per MIL-STD- 202, Method 208 Polarity: Polarrity symbols marked on the body Mounting position: Any Maximum ratings at Tc = 25 C, unless otherwise specified Conditions DB157G Parameter Symbol DB155G DB156G Unit V 1000 Repetitive peak reverse voltage 600 800 V RRM V RMS reverse voltage 420 560 700 V RMS V 1000 DC blocking voltage 600 800 V DC T -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions DB155G DB156G DB157G Unit Maximum average forward I T = 40 C 1.5 1.5 1.5 A O a rectified current I t = 8.3 ms, half sine Peak forward surge current 50 50 50 A FSM p Maximum instantaneous forward V I = 1.5 A 1.1 V 1.1 1.1 F F voltage drop T = 25 C 5 5 5 Maximum DC reverse current at a I A R rated DC blocking voltage T = 125 C 500 500 500 a 2 2 I t A sec Rating for fusing t < 8.3 ms 10 10 10 10 C 14 14 14 pF Typical junction capacitance j R Typical thermal resistance 36 36 36 C/W JA 1 Oct. 2018 DB155G thru DB157G 2 Oct. 2018