FST8320SM thru FST8340SM
V = 20 V - 40 V
RRM
Silicon Power
I = 80 A
F
Schottky Diode
Features
High Surge Capability D61-3SM Package
Types from 20 V to 40V V
RRM
Types up to 100V V
RRM
Maximum ratings, at T = 25 C, unless otherwise specified
j
Parameter Symbol Conditions FST8320SM FST78330SM FST8335SM FST8340SM Unit
Repetitive peak reverse voltage V 20 30 35 40 V
RRM
V 35 28
RMS reverse voltage 14 21 V
RMS
DDCC blockingblocking vvoltageoltage VV 2020 3030 3535 4040 VV
DCDC
I T 110 C
Continuous forward current 80 80 80 80 A
F C
Surge non-repetitive forward
I T = 25 C, t = 8.3 ms
800 800 800 800 A
F,SM C p
current, Half Sine Wave
Operating temperature T -40 to 175 -40 to 175 -40 to 175 -40 to 175 C
j
T -40 to 175 -40 to 175
Storage temperature -40 to 175 -40 to 175 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions FST8335SM FST78340SM
Parameter Symbol FST8320SM FST8330SM Unit
V I = 80 A, T = 25 C 0.65 0.65 V
Diode forward voltage F F j 0.65 0.65
V = 20 V, T = 25 C 1.5 1.5
R j 1.5 1.5
I
Reverse current mA
R
V = 20 V, T = 125 C 500 500
500 500
R j
Thermal characteristics
Thermal resistance, junction -
R 1.2 1.2
1.2 1.2 C/W
thJC
case
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/FST8320SM thru FST8340SM
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/