GA35XCP12-247 V IGBT/SiC Diode Co-pack = 1200 V CES I = 35 A CM V = 3.0 V CE(SAT) Features Package Optimal Punch Through (OPT) technology RoHS Compliant SiC freewheeling diode Positive temperature coefficient for easy paralleling 2 Extremely fast switching speeds Temperature independent switching behavior of SiC rectifier Best RBSOA/SCSOA capability in the industry High junction temperature Industry standard packaging 1 1 2 3 3 TO 247AB Advantages Applications Industry s highest switching speeds Solar Inverters High temperature operation Aerospace Actuators Improved circuit efficiency Server Power Supplies Low switching losses Resonant Inverters > 100 kHz Inductive Heating Electronic Welders Maximum Ratings, at T = 150 C, unless otherwise specified j Parameter Symbol Conditions Values Unit IGBT Collector-Emitter Voltage V 1200 V CES I T 105 C DC-Collector Current 35 A CM c V Gate Emitter Peak Voltage 20 V GES T Operating Temperature -40 to +150 C vj T Storage Temperature -40 to +150 C stg Free-wheeling diode I T 105 C DC-Forward Current 35 A F c I T = 25 C, t = 10 s Non Repetitive Peak Forward Current tbd A FM c P I Surge Non Repetitive Forward Current t = 10 ms, half sine, T = 25 C tbd A F,SM P c Thermal Characteristics Th. Resistance Junction to Case R IGBT 0.34 K/W thJC R Th. Resistance Junction to Case SiC diode 0.31 K/W thJC Values Mechanical Properties min. typ. max. M Mounting Torque 1.5 2 Nm d GA35XCP12-247 Electrical Characteristics Values Parameter Symbol Conditions Unit min. typ. max. IGBT V V = V , I = 0.6 mA, T = 25 C Gate Threshold Voltage 5.5 6 6.5 V GE(th) GE CE C j I V = 0 V, V = V , T = 25 C 0.02 0.2 mA GE CE CES j CES,25 Collector-Emitter Leakage Current I V = 0 V, V = V , T = 150 C 0.3 mA CES,150 GE CE CES j I V = 0 V, V = 20 V, T = 25 C Gate-Leakage Current 500 nA GES CE GE j T = 25C Collector-Emitter Threshold Voltage V 1.1 V CE(TO) j R V = 15 V, T = 25 C 50 m CE,25 GE j Collector-Emitter Slope Resistance R V = 15 V, T = 150 C 87.5 m GE j CE,150 V I = 35 A, V = 15 V, T = 25 C(150 C) Collector-Emitter Saturation Voltage 3.0(3.9) V C GE j CE(SAT) C Input Capacitance tbd nF ies V = 0 V, V = 25 V, f = 1 MHz C Output Capacitance tbd nF oes GE CE C Reverse Transfer Capacitance tbd nF res Q V = 800 V, I = 35 A, V = 15V Gate Charge 50 nC CC C GE G T=125 C, R =56 , V =1200 V, V =15 V Reverse Bias Safe Operating Area RBSOA 45 A j g CC GE I T = 125 C, R = 56 , Short Circuit Current 60 A sc j g V = 900 V, V = 15 V Short Circuit Duration t 10 s sc CC GE t Rise Time 85 ns r t Fall Time V = 800 V, I = 35 A, 205 ns f CC C t R = R = 22 , Turn On Delay Time 40 ns gon goff d(on) V = 15 V, V = -8 V, t Turn Off Delay Time 232 ns d(off) GE(0n) GE(0ff) T= 125 C E Turn-On Energy Loss Per Pulse j 2.66 mJ on E Turn-Off Energy Loss Per Pulse 4.35 mJ off Free-wheeling diode V I = 35 A, V = 0 V, T = 25 C (150 C ) Forward Voltage 2.6(3.5) V F F GE j T = 25 C Threshold Voltage at Diode V 0.8 V D(TO) j I Peak Reverse Recovery Current 3.01 A rrm t I = 35 A, V = 0 V, V = 650 V Reverse Recovery Time 36 ns F GE R rr -dI /dt = 300 A/ s, T = 125 C Diode peak rate of fall of reverse recovery current F j dI /dt 190 A/ s rr during tb o o Figure 1: Typical Output Characteristics at 25 C Figure 2: Typical Output Characteristics at 150 C Preliminary Datasheet January 2011 Page 2 of 5