Isolated Gate Driver GA03IDDJT30-FR4 Gate Driver for SiC SJT with Output V = 3000 V ISOLATION and Signal Isolation P = 5 W DRIVE f = 350 kHz max Features Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards Multiple Internal level topology for low drive losses High-side drive capable with 3000 V isolation 5000 V Signal Isolation (up to 10 s) Capable of high gate currents with 3 W maximum power RoHS Compliant Section I: Introduction The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC Junction Transistors (SJT). The board utilizes DC/DC converters and FOD3182 opto-isolators making it capable of driving high and low-side devices in a half-bridge configuration as well as IXDN609 gate driver ICs providing fast switching and customizable continuous gate currents necessary for SJT devices. Its footprint and 12 V supply voltage make it a plug-in replacement for existing SiC MOSFET gate drive solutions. GA03IDDJT30-FR4 Gate Driver Board FOD3182 IXDN609 Signal Isolator Gate Drive IC C G D I R G 4 G Gate Gate FOD3182 IXDN609 Signal Signal Isolator Gate Drive IC S SiC SJT R G +20 V DC/DC +12 V +5 V Converters -5 V Figure 1: Simplified GA03IDDJT30-FR4 Gate Drive Board Block Diagram Section II: Compatibility with SiC SJTs The GA03IDDJT30-FR4 has a 5 W power capability and a pre-installed R of 3.75 on-board which can be modified by the user for safe G operation of certain SJT and SiC CoPack parts. Please see the table below and Section VII for more information. Table 1: GA03IDDJT30-FR4 SiC SJT Compatibility Information Table SJT Part Number Compatible Requires R Modification by User G GA04JT17-247 Not Required Yes GA05JT12-247/263 Yes Not Required GA05SICP12-263 Not Required Yes GA10JT12-247/263 Recommended (see Section VII) Yes GA10SICP12-263 Yes Recommended (see Section VII) GA16JT17-247 Required (see Section VII) Yes GA20JT12-247/263 Required (see Section VII) Yes GA20SICP12-263 Yes Required (see Section VII) GA50JT12-247 Not Compatible No GA50JT17-247 No Not Compatible GA50SICP12-227 No Not Compatible GA100JT17-227 No Not Compatible GA100SICP12-227 No Not Compatible Aug. 2016 Isolated Gate Driver GA03IDDJT30-FR4 Section III: Operational Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. Input Supply Voltage V V High, V Low CC CC CC 10.8 12 13.2 V Input Signal Voltage, Off V sig, OFF -5 0 0.8 V Input Signal Voltage, On V sig, ON 3.2 5.0 6.4 V Input Signal Current, On I 20 36 50 mA sig, ON Propagation Delay, Signal Turn On t d,ON 160 270 ns Propagation Delay, Signal Turn Off t d,OFF 187 270 ns Output Gate Current, Peak I 4 9.0 A G,ON Output Gate Current, Continuous I D = 0.3, f < 350 kHz 0.35 1.8 A G,steady Output Gate Voltage Rise Time t C = 10 nF load 21 35 ns r C = 10 nF Output Gate Voltage Fall Time t load 14 25 ns f Dependant on device driven and C Operating Frequency f G 350 kHz sw Power Dissipation P 3.0 W (V ) + 2.0 W (V + V ) 5.0 W tot GL GH EE SJT Drain Source Voltage V On driven power transistor 1700 V DS Isolation Voltage, Signal V 5000 V ISO-SIG Isolation Voltage, Voltage Supply V 3000 V ISO-DC Storage Temperature T -55 100 C Product Weight 19 g Section IV: Pin Out Description VCC Low RTN Source VCC Low Source Signal RTN Source Signal VCC High RTN Gate VCC High Gate Gate Figure 2: Gate Drive Board Top View Table 2: GA03IDDJT30-FR4 Pin Out Connections Header Pin Label Suggested Connection JP1 VCC High + 12 V, > 6 W Supply JP1 VCC High RTN Analog Ground JP1 Signal Gate Drive Control Signal JP1 Signal RTN Analog Ground JP1 VCC Low + 12 V, > 6 W Supply JP1 VCC Low RTN Analog Ground Gate Gate SJT Gate Pin Gate Gate SJT Gate Pin Gate Gate SJT Gate Pin Source Source SJT Source Pin Source Source SJT Source Pin Source Source SJT Source Pin Aug. 2016