GA50SICP12-227 Silicon Carbide Junction V = 1200 V DS Transistor/Schottky Diode Co-Pack R = 20 m DS(ON) I = 80 A D ( 25C) I = 50 A D ( 115C) h = 100 FE ( 25C) Features Package 175 C Maximum Operating Temperature Gate Oxide Free SiC Switch D S Optional Gate Return Pin D Exceptional Safe Operating Area G Integrated SiC Schottky Rectifier GR Pin D - Drain G Excellent Gain Linearity Pin S - Source Temperature Independent Switching Performance GR Pin GR - Gate Return Low Output Capacitance S Pin G - Gate Positive Temperature Coefficient of R DS,ON Isolated Baseplate Please note: The Source and Gate Return Suitable for Connecting an Anti-parallel Diode pins are not exchangeable. Their exchange SOT-227 might lead to malfunction. Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling, Geothermal Instrumentation > 20 s Short-Circuit Withstand Capability Hybrid Electric Vehicles (HEV) Lowest-in-class Conduction Losses Solar Inverters High Circuit Efficiency Switched-Mode Power Supply (SMPS) Minimal Input Signal Distortion Power Factor Correction (PFC) High Amplifier Bandwidth Induction Heating Reduced cooling requirements Uninterruptible Power Supply (UPS) Reduced system size Motor Drives Table of Contents Section I: Absolute Maximum Ratings .......................................................................................................... 1 Section II: Static Electrical Characteristics ................................................................................................... 2 Section III: Dynamic Electrical Characteristics ............................................................................................ 2 Section IV: Figures .......................................................................................................................................... 4 Section V: Driving the GA50SICP12-227 ....................................................................................................... 8 Section VI: Package Dimensions ................................................................................................................. 12 Section VII: SPICE Model Parameters ......................................................................................................... 13 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes SiC Junction Transistor V = 0 V Drain Source Voltage V GS 1200 V DS Continuous Drain Current I T = 25C 80 A Fig. 17 D C Continuous Drain Current I T = 115C 50 A Fig. 17 D C Continuous Gate Current I 3.5 A G Continuous Gate Return Current I 3.5 A GR o T = 175 C, I = 50 VJ D,max Turn-Off Safe Operating Area RBSOA A Fig. 19 Clamped Inductive Load V V DS DSmax o T = 175 C, I = 1 A, V = 800 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD T = 25 C / 115 C, t > 100 ms Power Dissipation P C p 265 / 106 W Fig. 16 tot Operating and storage temperature T -55 to 175 C stg Dec 2015 Latest version of this datasheet at: GA50SICP12-227 Parameter Symbol Conditions Value Unit Notes Free-Wheeling SiC Diode Repetitive peak reverse voltage V 1200 V RRM Continuous forward current I T 115 C 50 A F C RMS forward current I T 115 C 87 A F(RMS) C Surge non-repetitive forward current, T = 25 C, t = 10 ms 350 C P I A FSM T = 115 C, t = 10 ms Half Sine Wave C P 313 Non-repetitive peak forward current I T = 25 C, t = 10 s 1625 A F,max C P 2 2 T = 25 C, t = 10 ms 450 2 C P I t value i dt A s T = 115 C, t = 10 ms C P 300 Thermal Characteristics Thermal resistance, junction - case R SiC Junction Transistor 0.57 C/W Fig. 20 thJC SiC Diode Thermal resistance, junction - case R 0.53 C/W Fig. 21 thJC Section II: Static Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: On State 20 I = 50 A, T = 25 C D j Drain Source On Resistance R I = 50 A, T = 150 C 36 m Fig. 5 DS(ON) D j I = 50 A, T = 175 C D j 42 I = 50 A, I /I = 40, T = 25 C 3.42 D D G j Gate Source Saturation Voltage V V Fig. 7 GS,SAT I = 50 A, I /I = 30, T = 175 C D D G j 3.23 100 V = 8 V, I = 50 A, T = 25 C DS D j DC Current Gain h V = 8 V, I = 50 A, T = 125 C 65 Fig. 4 FE DS D j V = 8 V, I = 50 A, T = 175 C DS D j 58 I = 50 A, T = 25 C 1.4 1.8 F j FWD forward voltage V V F I = 50 A, T = 175 C F j 2.1 3.0 B: Off State 100 V = 1200 V, V = 0 V, T = 25 C DS GS j Drain Leakage Current I V = 1200 V, V = 0 V, T = 150 C 200 A Fig. 8 DSS DS GS j V = 1200 V, V = 0 V, T = 175 C DS GS j 500 Gate Leakage Current I V = 20 V, T = 25 C 20 nA SG SG j Section III: Dynamic Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: Capacitance and Gate Charge Input Capacitance C V = 0 V, V = 800 V, f = 1 MHz 7770 pF Fig. 9 iss GS DS 3370 V = 1 V, f = 1 MHz DS Reverse Transfer/Output Capacitance C /C V = 400 V, f = 1 MHz 335 pF Fig. 9 rss oss DS V = 800 V, f = 1 MHz DS 250 V = 400 V 230 R Total Output Capacitance Charge Qoss nC V = 800 V R 345 Output Capacitance Stored Energy E V = 0 V, V = 800 V, f = 1 MHz 100 J Fig. 10 OSS GS DS Effective Output Capacitance, C I = constant, V = 0 V, V = 0800 V 430 pF D GS DS oss,tr time related Effective Output Capacitance, C V = 0 V, V = 0800 V 315 pF oss,er GS DS energy related V = -53 V Gate-Source Charge Q GS 65 nC GS V = 0 V, V = 0800 V Gate-Drain Charge Q GS DS 345 nC GD Gate Charge - Total Q 410 nC G Dec 2015 Latest version of this datasheet at: