GAP05SLT80-220 Silicon Carbide Power V = 8000 V RRM Schottky Diode I = 50 mA F Q = 8 nC C Features Package Industrys leading low leakage currents RoHS Compliant 175 C maximum operating temperature Positive temperature coefficient of V F Extremely fast switching speeds PIN 1 2 Superior figure of merit Q /I C F 1 PIN 2 Advantages Applications Low reverse leakage current at operating temperature Voltage Multiplier Improved circuit efficiency (Lower overall cost) Ignition/Trigger Circuits Low switching losses Oil/Downhole Ease of paralleling devices without thermal runaway Lighting Smaller heat sink requirements Defense Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Electrical Specifications Absolute Maximum Ratings Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 8000 V RRM Continuous forward current I 50 mA F RMS forward current I 87 mA F(RMS) Power dissipation P T = 25 C 0.2 W tot C Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics Values Parameter Symbol Conditions Unit min. typ. max. I = 50 mA, T = 25 C 4.6 F j Diode forward voltage V V F I = 50 mA, T = 175 C 12 F j V = 8000 V, T = 25 C 3.8 R j Reverse current I A R VR = 8000 V, Tj = 125 C 5.3 V = 1 V, f = 1 MHz, T = 25 C R j 25 Total capacitance C V = 400 V, f = 1 MHz, T = 25 C 8 pF R j V = 1000 V, f = 1 MHz, T = 25 C 6 R j Sep 2014 GAP05SLT80-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Sep 2014