X-On Electronics has gained recognition as a prominent supplier of GB02SLT12-220 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GB02SLT12-220 Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GB02SLT12-220 GeneSiC Semiconductor

GB02SLT12-220 electronic component of GeneSiC Semiconductor
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Part No.GB02SLT12-220
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1200V 2A SiC Schottky Rectifier
Datasheet: GB02SLT12-220 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 2.266 ea
Line Total: USD 5665 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 2.266
5000 : USD 2.178

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 32
Multiples : 1
32 : USD 2.3902

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Power Dissipation
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GB02SLT12-220 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GB02SLT12-220 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GB02SLT12-220 Silicon Carbide Power V = 1200 V RRM Schottky Diode I = 5 A F (Tc = 25C) Q = 9 nC C Features Package 1200 V Schottky rectifier RoHS Compliant 175 C maximum operating temperature case Temperature independent switching behavior Superior surge current capability PIN 1 CASE Positive temperature coefficient of V F PIN 2 2 Extremely fast switching speeds Superior figure of merit Q /I C F 1 TO 220AC Advantages Applications Improved circuit efficiency (Lower overall cost) Power Factor Correction (PFC) Low switching losses Switched-Mode Power Supply (SMPS) Ease of paralleling devices without thermal runaway Solar Inverters Smaller heat sink requirements Wind Turbine Inverters Low reverse recovery current Motor Drives Low device capacitance Induction Heating Low reverse leakage current at operating temperature Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 1200 V RRM T 160 C Continuous forward current I C 2 A F RMS forward current I T 160 C 3 A C F(RMS) T = 25 C, t = 10 ms 18 Surge non-repetitive forward current, Half Sine C P I A F,SM Wave T = 160 C, t = 10 ms 15 C P Non-repetitive peak forward current I T = 25 C, t = 10 s 100 A F,max C P T = 25 C, t = 10 ms C P 1.6 2 2 2 I t value i dt As T = 160 C, t = 10 ms 1.1 C P Power dissipation P T = 25 C 65 W tot C Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 2 A, T = 25 C 1.5 1.8 F j Diode forward voltage V V F I = 2 A, T = 175 C F j 2.6 3.0 V = 1200 V, T = 25 C R j 5 50 Reverse current I A R V = 1200 V, T = 175 C 10 100 R j V = 400 V 9 R Total capacitive charge Q nC C I I F F,MAX V = 960 V 14 R dI /dt = 200 A/ s F V = 400 V R T = 175 C j Switching time t < 17 ns s V = 960 V R V = 1 V, f = 1 MHz, T = 25 C 131 R j V = 400 V, f = 1 MHz, T = 25 C Total capacitance C R j 12 pF V = 1000 V, f = 1 MHz, T = 25 C 8 R j Thermal Characteristics Thermal resistance, junction - case R 2.3 C/W thJC Mechanical Properties Mounting torque M 0.6 Nm Aug 2014 GB02SLT12-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Switching Energy vs Reverse Voltage Characteristics Characteristics Aug 2014

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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