TM GB05SLT12-252 1200V 5A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 1200 V F (T = 135C) I C = 13 A QC = 27 nC Features Package Low V for High Temperature Operation F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F TO-252-2 REACH K A High dV/dt Ruggedness Advantages Applications Improved System E ciency Power Factor Correction (PFC) High System Reliability Solar Inverters Opmal Pti rice Performance Electric Vehicles Reduced Cooling Requirements High Frequency Converters Increased System Power Density Battery Chargers Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway Anti-P arallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Lighng ti Absolute Maximum Ratings (At Tc = 25C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 18 Continuous Forward Current I T = 135C, D = 1 13 A Fig. 4 F C T = 167C, D = 1 5 C T = 25C, t = 10 ms 50 Non-Repetitive Peak Forward Surge Current, Half Sine C P I A F,SM Wave T = 150C, t = 10 ms 40 C P TC = 25C, tP = 10 ms 30 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 21 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 250 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 12 A s C P Non-Repetitive Avalanche Energy EAS L = 7.2 mH, IAS = 5 A 90 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 178 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB05SLT12-252/GB05SLT12-252.pdf Page 1 of 7TM GB05SLT12-252 1200V 5A SiC Schottky MPS Diode Electrical Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 5 A, T = 25C 1.5 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 5 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 6 R j VR = 400 V 18 Total Capacitive Charge Q nC Fig. 7 C V = 800 V 27 R IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 305 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 18 Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.84 C/W Fig. 9 thJC Weight W 0.3 g T Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB05SLT12-252/GB05SLT12-252.pdf Page 2 of 7