GB2X50MPS17-227 TM 1700V 100A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1700 V RRM IF (T = 134C) = 100 A * C Q = 1076 nC * C Features Package Low V for High Temperature Opera tion F A A Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F Low V for High Temperature Opera tion F SOT-227 REACH K K Advantages Applicaoti ns Improved System E c iency EV Fast Chargers High System Reliability Solar Inverters Op timal Price Performance Wind Energy Converters Reduced Cooling Requirements Train Auxiliary Power Supplies Increased System Power Density High Frequency Rec ti ers Zero Reverse Recovery Current Switched Mode Power Supplies Easy to Parallel without Thermal Runaway Motor Drives Improved System E c iency Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 1700 V RRM TC = 75C, D = 1 84 / 168 Continuous Forward Current (Per Leg / Per Device) IF TC = 100C, D = 1 71 / 142 A Fig. 4 T = 134C, D = 1 50 / 100 C T = 25C, t = 10 ms 500 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave (Per Leg) T = 150C, t = 10 ms 400 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 300 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 210 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 2500 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 1250 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 1.0 mH, IAS = 50 A 1301 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 1360 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 387 / 774 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 1 of 7GB2X50MPS17-227 TM 1700V 100A SiC Schoktt y MPS Diode Electrical Characteriscti s (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 50 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 50 A, T = 175C 2.1 F j V = 1700 V, T = 25C 2 10 R j Reverse Current I A Fig. 2 R V = 1700 V, T = 175C 42 R j VR = 600 V 368 Total Capacitive Charge Q nC Fig. 7 C VR = 1200 V 538 IF IF,MAX dI /dt = 200 A/s F V = 600 V R Switching Time tS < 10 ns V = 1200 V R VR = 1 V, f = 1MHz 4701 Total Capacitance C pF Fig. 6 VR = 1200 V, f = 1MHz 259 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.39 C/W Fig. 9 thJC (Per Leg) Weight WT 28.0 g Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque T M4 Screws 1.3 Nm C t = 1s (50/60 Hz) 3000 Isolation Voltage(RMS) V V ISO t = 60s (50/60 Hz) 2500 d Terminal to Terminal 10.5 Ctt Creepage Distance on Surface mm d Terminal to Backside 8.5 Ctb d Terminal to Terminal 3.2 Stt Striking Distance Through Air mm d Terminal to Backside 6.8 Stb Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GB2X50MPS17-227/GB2X50MPS17-227.pdf Page 2 of 7