GB50SLT12-247 Silicon Carbide Power V = 1200 V RRM Schottky Diode I = 100 A F (Tc = 25C) I = 50 A F (Tc 135C) Q = 158 nC C Features Package Industrys leading low leakage currents RoHS Compliant 175 C maximum operating temperature case Temperature independent switching behavior PIN 1 Superior surge current capability CASE PIN 2 Positive temperature coefficient of V F 2 Extremely fast switching speeds Superior figure of merit Q /I C F 1 TO 247AC Advantages Applications Low standby power losses Automotive Traction Inverters Improved circuit efficiency (Lower overall cost) Power Factor Correction (PFC) Low switching losses Switched-Mode Power Supply (SMPS) Ease of paralleling devices without thermal runaway Solar Inverters Smaller heat sink requirements Wind Turbine Inverters Low reverse recovery current Motor Drives Low device capacitance Induction Heating Low reverse leakage current at operating temperature Uninterruptible Power Supply (UPS) Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 1200 V RRM Continuous forward current I T = 25 C 100 A F C T 135 C Continuous forward current I C 50 A F T 135 C RMS forward current I C 87 A F(RMS) T = 25 C, t = 10 ms Surge non-repetitive forward current, Half Sine C P 350 I A F,SM Wave T = 135 C, t = 10 ms 313 C P Non-repetitive peak forward current I T = 25 C, t = 10 s 1625 A F,max C P TC = 25 C, tP = 10 ms 450 2 2 2 I t value i dt A s T = 135 C, t = 10 ms 300 C P Power dissipation P T = 25 C 620 W tot C Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 50 A, T = 25 C 1.5 1.8 F j Diode forward voltage V V F I = 50 A, T = 175 C 2.4 3.0 F j V = 1200 V, T = 25 C R j 25 1000 Reverse current I A R V = 1200 V, T = 175 C R j 100 3000 V = 400 V 158 R Total capacitive charge Q nC C I I F F,MAX V = 960 V 247 R dI /dt = 200 A/s F V = 400 V R T = 175 C j Switching time t 50 ns s V = 960 V R V = 1 V, f = 1 MHz, T = 25 C 2940 R j Total capacitance C V = 400 V, f = 1 MHz, T = 25 C 203 pF R j V = 1000 V, f = 1 MHz, T = 25 C R j 142 Thermal Characteristics Thermal resistance, junction - case R 0.242 C/W thJC Mechanical Properties Mounting torque M 0.6 Nm Dec 2014 GB50SLT12-247 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Characteristics Dec 2014