GC20MPS12-247 TM 1200V 20A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 152C) = 20 A C Q = 107 nC C Features Package Low V for High Temperature Opera tion F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Power Factor Correction (PFC) High System Reliability Electric Vehicles and Ba ttery Chargers Op timal Price Performance Solar Inverters Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current Motor Drives Easy to Parallel without Thermal Runaway An ti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching Induction Heating & Welding Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 40 Continuous Forward Current IF TC = 135C, D = 1 28 A Fig. 4 T = 152C, D = 1 20 C T = 25C, t = 10 ms 200 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 160 C P TC = 25C, tP = 10 ms 120 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 84 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 1000 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 200 A s C P Non-Repetitive Avalanche Energy EAS L = 1.8 mH, IAS = 20 A 360 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 245 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC20MPS12-247/GC20MPS12-247.pdf Page 1 of 7GC20MPS12-247 TM 1200V 20A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 20 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 20 A, T = 175C 1.9 F j V = 1200 V, T = 25C 2 10 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 22 R j VR = 400 V 74 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 107 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1218 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 71 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.61 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC20MPS12-247/GC20MPS12-247.pdf Page 2 of 7