GC2X20MPS12-247 TM 1200V 40A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 152C) = 40 A * C Q = 214 nC * C Features Package Low V for High Temperature Opera tion F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-3 REACH A K A Advantages Applicaoti ns Improved System E c iency Power Factor Correc tion (PFC) High System Reliability Electric Vehicles and Battery Chargers Optimal Price Performance Solar Inverters Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current Motor Drives Easy to Parallel without Thermal Runaway Anti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching Induc tion Hea ting & Welding Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 1200 V RRM TC = 100C, D = 1 40 / 80 Continuous Forward Current (Per Leg / Per Device) IF TC = 135C, D = 1 28 / 56 A Fig. 4 T = 152C, D = 1 20 / 40 C T = 25C, t = 10 ms 200 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave (Per Leg) T = 150C, t = 10 ms 160 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 120 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 84 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 1000 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 200 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 1.8 mH, IAS = 20 A 360 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 245 / 490 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X20MPS12-247/GC2X20MPS12-247.pdf Page 1 of 7GC2X20MPS12-247 TM 1200V 40A SiC Schoktt y MPS Diode Electrical Characteriscti s (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 20 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 20 A, T = 175C 1.9 F j V = 1200 V, T = 25C 2 10 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 22 R j VR = 400 V 74 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 107 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1218 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 71 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.61 C/W Fig. 9 thJC (Per Leg) Weight WT 6.1 g Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC2X20MPS12-247/GC2X20MPS12-247.pdf Page 2 of 7