GC50MPS33H TM 3300V 40A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 3300 V RRM IF (T = 152C) = 40 A C Q = 429 nC C Features Package Enhanced Surge and Avalanche Robustness Case Low V for High Temperature Opera tion F Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns High System Reliability EV Fast Chargers Optimal Price Performance 1500V Solar Inverters Improved System E c iency Pulsed Power Reduced Cooling Requirements HVDC and Grid-Converters Increased System Power Density Industrial Power Supply Zero Reverse Recovery Current Motor Trac tion Easy to Parallel without Thermal Runaway Medical Imaging Enables Extremely Fast Switching High Voltage Converters Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 3300 V RRM TC = 100C, D = 1 75 Continuous Forward Current IF TC = 135C, D = 1 54 A Fig. 4 T = 152C, D = 1 40 C T = 25C, t = 10 ms 500 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 400 C P TC = 25C, tP = 10 ms 300 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 210 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 2500 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 1250 A s C P Non-Repetitive Avalanche Energy EAS L = 1.2 mH, IAS = 40 A 1000 mJ Diode Ruggedness dV/dt V = 0 ~ 2640 V 200 V/ns R Power Dissipation P T = 25C 944 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC50MPS33H/GC50MPS33H.pdf Page 1 of 7 ENGINEERING SAMPLEGC50MPS33H TM 3300V 40A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 40 A, T = 25C 1.95 2.5 F j Diode Forward Voltage V V Fig. 1 F I = 40 A, T = 175C 3.7 F j V = 3300 V, T = 25C 10 100 R j Reverse Current I A Fig. 2 R V = 3300 V, T = 175C 200 R j VR = 1500 V 399 Total Capacitive Charge Q nC Fig. 7 C VR = 1700 V 429 IF IF,MAX dI /dt = 200 A/s F V = 1500 V R Switching Time tS < 10 ns V = 1700 V R VR = 1 V, f = 1MHz 3480 Total Capacitance C pF Fig. 6 VR = 1700 V, f = 1MHz 150 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.16 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GC50MPS33H/GC50MPS33H.pdf Page 2 of 7 ENGINEERING SAMPLE