GD10MPS12H TM 1200V 10A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 156C) = 10 A C Q = 32 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Superior Figure of Merit Q *V C F 100% Avalanche (UIL) Tested Enhanced Surge Current Withstand Capability RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Power Factor Correc tion (PFC) High System Reliability Solar Inverters Optimal Price Performance Ba ttery Chargers Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway An ti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Ligh ting Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 23 Continuous Forward Current IF TC = 135C, D = 1 16 A Fig. 4 T = 156C, D = 1 10 C T = 25C, t = 10 ms 80 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 64 C P TC = 25C, tP = 10 ms 48 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 33 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 400 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 32 A s C P Non-Repetitive Avalanche Energy EAS L = 1.8 mH, IAS = 10 A 91 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 149 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD10MPS12H/GD10MPS12H.pdf Page 1 of 7GD10MPS12H TM 1200V 10A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 10 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 10 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 10 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 7 R j VR = 400 V 22 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 32 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 367 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 21 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 1.0 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD10MPS12H/GD10MPS12H.pdf Page 2 of 7