GD30MPS12H TM 1200V 30A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 148C) = 30 A C Q = 97 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Superior Figure of Merit Q *V C F 100% Avalanche (UIL) Tested Enhanced Surge Current Withstand Capability RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Power Factor Correc tion (PFC) High System Reliability Electric Vehicles and Ba ttery Chargers Optimal Price Performance Solar Inverters Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current Motor Drives Easy to Parallel without Thermal Runaway Anti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching Induction Heating & Welding Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 55 Continuous Forward Current IF TC = 135C, D = 1 38 A Fig. 4 T = 148C, D = 1 30 C T = 25C, t = 10 ms 240 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 192 C P TC = 25C, tP = 10 ms 144 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 100 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 1200 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 288 A s C P Non-Repetitive Avalanche Energy EAS L = 0.6 mH, IAS = 30 A 271 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 313 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Sep Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD30MPS12H/GD30MPS12H.pdf Page 1 of 7GD30MPS12H TM 1200V 30A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 30 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 30 A, T = 175C 1.9 F j V = 1200 V, T = 25C 2 20 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 20 R j VR = 400 V 67 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 97 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1101 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 64 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.48 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Sep Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD30MPS12H/GD30MPS12H.pdf Page 2 of 7