X-On Electronics has gained recognition as a prominent supplier of GD30MPS12H Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GD30MPS12H Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GD30MPS12H GeneSiC Semiconductor

GD30MPS12H electronic component of GeneSiC Semiconductor
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Part No.GD30MPS12H
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1200V 30A TO-247-2 SiC Schottky MPS
Datasheet: GD30MPS12H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.5218 ea
Line Total: USD 9.52 
Availability - 536
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
536
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 9.5218
10 : USD 8.6591
30 : USD 8.4248
120 : USD 7.9029
270 : USD 7.7644
510 : USD 7.7644
1020 : USD 7.6366
2520 : USD 7.3277

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GD30MPS12H from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GD30MPS12H and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GD30MPS12H TM 1200V 30A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 148C) = 30 A C Q = 97 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Superior Figure of Merit Q *V C F 100% Avalanche (UIL) Tested Enhanced Surge Current Withstand Capability RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Power Factor Correc tion (PFC) High System Reliability Electric Vehicles and Ba ttery Chargers Optimal Price Performance Solar Inverters Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current Motor Drives Easy to Parallel without Thermal Runaway Anti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching Induction Heating & Welding Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 55 Continuous Forward Current IF TC = 135C, D = 1 38 A Fig. 4 T = 148C, D = 1 30 C T = 25C, t = 10 ms 240 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 192 C P TC = 25C, tP = 10 ms 144 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 100 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 1200 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 288 A s C P Non-Repetitive Avalanche Energy EAS L = 0.6 mH, IAS = 30 A 271 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 313 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Sep Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD30MPS12H/GD30MPS12H.pdf Page 1 of 7GD30MPS12H TM 1200V 30A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 30 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 30 A, T = 175C 1.9 F j V = 1200 V, T = 25C 2 20 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 20 R j VR = 400 V 67 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 97 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1101 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 64 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.48 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Sep Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD30MPS12H/GD30MPS12H.pdf Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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