GD50MPS12H TM 1200V 50A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 144C) = 50 A C Q = 162 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Superior Figure of Merit Q *V C F 100% Avalanche (UIL) Tested Enhanced Surge Current Withstand Capability RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Electric Vehicles and Fast Chargers High System Reliability Solar Inverters Optimal Price Performance Train Auxiliary Power Supplies Reduced Cooling Requirements High frequency Converters Increased System Power Density Motor Drives Zero Reverse Recovery Current Induction Heating and Welding Easy to Parallel without Thermal Runaway Uninterrup tible Power Supplies Enables Extremely Fast Switching Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 86 Continuous Forward Current IF TC = 135C, D = 1 59 A Fig. 4 T = 144C, D = 1 50 C T = 25C, t = 10 ms 400 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 320 C P TC = 25C, tP = 10 ms 240 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 168 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 2000 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 800 A s C P Non-Repetitive Avalanche Energy EAS L = 0.4 mH, IAS = 50 A 452 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 463 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD50MPS12H/GD50MPS12H.pdf Page 1 of 7GD50MPS12H TM 1200V 50A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 50 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 50 A, T = 175C 1.9 F j V = 1200 V, T = 25C 3 30 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 33 R j VR = 400 V 111 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 162 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1842 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 108 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.32 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD50MPS12H/GD50MPS12H.pdf Page 2 of 7