TM GE06MPS06E 650V 6A SiC Schottky MPS Diode Silicon Carbide Schokytt Diode VRRM = 650 V F (T = 163C) I C = 6 A QC = 15 nC Features Package Gen5 Thin Chip Technology for Low V F Case Low Conducon Lti osses for All Load Conditions Superior Figure of Merit Q /I C F RoHS Enhanced Surge Current Robustness Low Thermal Resistance Temperature Independent Fast Switching Positive Temperature Coe cient of V F TO-252-2 REACH K A High dV/dt Ruggedness Advantages Applications Optimal P rice Performance Switched Mode Power Supply (SMPS) Improved System E ciency Solar Inverter Enables Extremely Fast Switching Server and Telecom Power Supply Reduced Cooling Requirements Baerytt Charger Increased System Power Density Uninterruptible P ower Supply (UPS) Zero Reverse Recovery Current Easy to Parallel without Thermal Runaway High System Reliability Absolute Maximum Rangsti (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 650 V RRM TC = 100C, D = 1 17 Continuous Forward Current I T = 135C, D = 1 12 A Fig. 4 F C T = 163C, D = 1 6 C T = 25C, t = 10 ms 33 Non-Repetitive Peak Forward Surge Current, Half Sine C P I A F,SM Wave T = 150C, t = 10 ms 27 C P TC = 25C, tP = 10 ms 20 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 14 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 165 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 5.445 A s C P Non-Repetitive Avalanche Energy EAS L = 4.4 mH, IAS = 6 A 79 mJ Diode Ruggedness dV/dt V = 0 ~ 520 V 200 V/ns R Power Dissipation P T = 25C 133 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GE06MPS06E/GE06MPS06E.pdf Page 1 of 7TM GE06MPS06E 650V 6A SiC Schottky MPS Diode Electrical Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 6 A, T = 25C 1.25 1.35 F j Diode Forward Voltage VF V Fig. 1 I = 6 A, T = 150C 1.64 F j V = 650 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 650 V, T = 150C 42 R j VR = 200 V 10 Total Capacitive Charge Q nC Fig. 7 C V = 400 V 15 R IF IF,MAX dI /dt = 200 A/s F V = 200 V R Switching Time tS < 10 ns V = 400 V R VR = 1 V, f = 1MHz 279 Total Capacitance C pF Fig. 6 VR = 400 V, f = 1MHz 20 Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 1.13 C/W Fig. 9 thJC Weight W 0.3 g T Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GE06MPS06E/GE06MPS06E.pdf Page 2 of 7