GE10MPS06E TM 650V 10A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 650 V RRM IF (T = 159C) = 10 A C Q = 25 nC C Features Package Revolu tionary Low Built-In Voltage (V ) BI Case Gen5 Thin Chip Technology for Low V F Superior Figure of Merit Q * V C F Enhanced Surge Current Robustness RoHS Low Thermal Resistance Zero Reverse Recovery 100% Avalanche (UIL) Tested Excellent dV/dt Ruggedness TO-252-2 REACH K A Advantages Applicaoti ns Low Conduc tion Losses for All Load Conditi ons Switched Mode Power Supply (SMPS) Op timal Price Performance Solar Inverter Increased System Power Density Server and Telecom Power Supply High System Reliability Ba ttery Charger Reduced Cooling Requirements Uninterrup tible Power Supply (UPS) Temperature Independent Fast Switching Motor Control Easy to Parallel without Thermal Runaway Power Factor Correc tion (PFC) Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 650 V RRM TC = 100C, D = 1 23 Continuous Forward Current IF TC = 135C, D = 1 17 A Fig. 4 T = 159C, D = 1 10 C T = 25C, t = 10 ms 70 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 56 C P TC = 25C, tP = 10 ms 42 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 29 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 350 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 24 A s C P Non-Repetitive Avalanche Energy EAS L = 2.6 mH, IAS = 10 A 131 mJ Diode Ruggedness dV/dt V = 0 ~ 520 V 200 V/ns R Power Dissipation P T = 25C 157 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE10MPS06E/GE10MPS06E.pdf Page 1 of 7GE10MPS06E TM 650V 10A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 10 A, T = 25C 1.25 1.4 F j Diode Forward Voltage V V Fig. 1 F I = 10 A, T = 175C 1.75 F j V = 650 V, T = 25C 1 10 R j Reverse Current I A Fig. 2 R V = 650 V, T = 175C 194 R j VR = 200 V 17 Total Capacitive Charge Q nC Fig. 7 C VR = 400 V 25 IF IF,MAX dI /dt = 200 A/s F V = 200 V R Switching Time tS < 10 ns V = 400 V R VR = 1 V, f = 1MHz 466 Total Capacitance C pF Fig. 6 VR = 400 V, f = 1MHz 33 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.96 C/W Fig. 9 Weight W 0.3 g T Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE10MPS06E/GE10MPS06E.pdf Page 2 of 7