GKN7112 GeneSiC Semiconductor

GKN71/04 thru GKN71/16 V = 400 V - 1600 V RRM Silicon Standard I =95 A F Recovery Diode Features High Surge Capability DO-5 Package Types up to 1600 V V RRM Equivalent to SKN71 Series 2 Not ESD Sensitive 2 1 1 GKN Maximum ratings, at T = 25 C, unless otherwise specified (GKR has leads reversed) j Conditions GKN71/12 GKN71/14 Parameter Symbol GKN71/04 GKN71/08 GKN71/16 Unit Repetitive peak reverse voltage V 400 800 1200 1400 1600 V RRM V DC blocking voltage 400 800 1200 1400 1600 V DC T 100 C I 95 95 Continuous forward current C 95 95 95 A F Surge non-repetitive forward I T = 25 C, t = 10 ms 1150 1150 1150 1150 1150 A F,SM C p current, Half Sine Wave T Operating temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions GKN71/04 GKN71/08 GKN71/12 GKN71/14 GKN71/16 Unit V I = 60 A, T = 25 C Diode forward voltage 1.5 1.5 1.5 1.5 1.5 V F F j Reverse current I V = V , T = 180 C 10 10 10 10 10 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 0.55 0.55 0.55 0.55 0.55 K/W thJC case 1 Oct. 2018 GKN71/04 thru GKN71/16 Fig 1: Forward Characteristics Fig 2: Forward Current vs Case Temp Fig 3: Transient Thermal Impedence vs Time Fig 4: Power Dissipation vs Forward Current 2 Oct. 2018