GKR130/04 thru GKR130/18
V = 400 V - 1800 V
RRM
Silicon Standard
I =165 A
F
Recovery Diode
Features
High Surge Capability DO-8 Package
Types up to 1800 V V
RRM
Equivalent to SKR130 Series
Not ESD Sensitive
2
1
2
1
GKR
Maximum ratings, at T = 25 C, unless otherwise specified (GKN has leads reversed)
j
Parameter Symbol Conditions GKR130/04 GKR130/08 GKR130/12 GKR130/14 GKR130/16GKR130/18Unit
Repppetitive peak reverse voltagge V 400 800 1200 1400 1600 1800 V
RRM
V 1200 1400
DC blocking voltage 400 800 1600 1800 V
DC
T 100 C
I 165 165 165 165 165 165 A
Continuous forward current C
F
Surge non-repetitive forward
I T = 25 C, t = 10 ms 2500 2500 2500 2500 2500 2500 A
F,SM C p
current, Half Sine Wave
T -55 to 150 -55 to 150
Operating temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C
j
Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions GKR130/04 GKR130/08 GKR130/12 GKR130/14 GKR130/16GKR130/18Unit
V I = 60 A, T = 25 C 1.5 1.5
Diode forward voltage 1.5 1.5 1.5 1.5 V
F F j
Reverse current I V = V , T = 180 C 22 22 22 22 22 22 mA
R R RRM j
Thermal characteristics
Thermal resistance, junction -
R 0.35 0.35
0.35 0.35 0.35 0.35 K/W
thJC
case
1
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/GKR130/04 thru GKR130/18
Fig 1: Forward Characteristics Fig 2: Forward Current vs Case Temp
Fig 3: Transient Thermal Impedence vs Time Fig 4: Power Dissipation vs Forward Current
2
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/