KBJ2510G GeneSiC Semiconductor

KBJ2506G thru KBJ2510G V = 600 V - 1000 V RRM Single Phase Glass Passivated I = 25 A O Silicon Bridge Rectifier Features Ideal for printed circuit board Low forward voltage drop, high current capability Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Reliable, low cost construction utilizing molded KBJ Package plastic technique Types from 600 V to 1000 V V RRM Not ESD Sensitive Maximum ratings at Ta = 25 C (ambient temperature), unless otherwise specified Parameter Symbol Conditions KBJ2506G KBJ2508G KBJ2510G Unit V Repetitive peak reverse voltage 600 800 1000 V RRM V 420 560 700 RMS reverse voltage V RMS DC blocking voltage V 600 800 1000 V DC Operating temperature T -55 to 125 -55 to 125 -55 to 125 C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics at Ta = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions KBJ2506G KBJ2508G KBJ2510G Parameter Symbol Unit T = 110 C 25 25 25 c Maximum average forward I A O rectified current T = 25 C 4.2 4.2 4.2 a I 8.3 ms single sine-wave 350 350 350 Peak forward surge current A FSM Maximum instantaneous V I = 12.5 A 1.05 1.05 1.05 V F F forward voltage per leg Maximum reverse current at T = 25 C 10 10 10 a rated DC blocking voltage per I A R T = 125 C 500 500 500 a leg 1 Oct. 2018 KBJ2506G thru KBJ2510G 2 Oct. 2018