KBP203G GeneSiC Semiconductor

KBP206G thru KBP210G V = 600 V - 1000 V RRM Single Phase Glass Passivated I = 2 A O Silicon Bridge Rectifier Features Ideal for printed circuit board Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Built-in printed circuit board stand-offs High temperature soldering guaranteed 265 C/ 10 seconds KBP Package High case dielectric strength Types from 600 V to 1000 V V RRM Not ESD Sensitive Mechanical Data Case: Reliable low cost construction Terminals: Plated leads, solderable per MIL-STD-202, Method 208 Mounting position: Any Weight: 0.065 oz, 2.2 grams Maximum ratings at Ta = 25 C (ambient temperature), unless otherwise specified Parameter Symbol Conditions KBP206G KBP208G KBP210G Unit Repetitive peak reverse voltage V 600 800 1000 V RRM V 420 560 700 RMS reverse voltage V RMS DC blocking voltage V 600 800 1000 V DC T -55 to 150 -55 to 150 -55 to 150 Operating temperature C j T Storage temperature -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics at Ta = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions KBP206G KBP208G KBP210G Unit Maximum average forward I T = 50 C 2 2 2 A O a rectified current Peak forward surge current I single sine-wave 60 60 60 A FSM Maximum instantaneous V I = 2 A 1.1 1.1 1.1 V F F forward voltage per leg Maximum reverse current at T = 25 C 10 10 10 a I rated DC blocking voltage per A R T = 100 C 500 500 500 leg a Thermal characteristics R Thermal resistance 25 25 25 C/W JL 1 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/KBP206G thru KBP210G 2 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/