KBPC2501W GeneSiC Semiconductor

KBPC25005T/W thru KBPC2504T/W V = 50 V - 400 V RRM Single Phase Silicon I = 25 A O Bridge Rectifier Features High efficiency Silicon junction Metal case Types from 50 V to 400 V V KBPC-T/W Package RRM Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation Mounting: Hole for 10 screw Polarity: Marked on case Maximum ratings at Tc = 25 C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Parameter Symbol Conditions KBPC25005T/W KBPC2501T/W KBPC2502T/W KBPC2504T/W Unit V 200 400 Repetitive peak reverse voltage 50 100 V RRM RMS reverse voltage V 35 70 140 280 V RMS V 200 400 DC blocking voltage 50 100 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% KBPC2502T/W KBPC2504T/W Parameter Symbol Conditions KBPC25005T/W KBPC2501T/W Unit Maximum average forward rectified I T = 55 C 25 25 c 25 25 A O current I 8.3 ms half sine-wave 350 350 Peak forward surge current 350 350 A FSM Maximum instantaneous forward V I = 12.5 A 1.1 1.1 V F F 1.1 1.1 voltage per leg T = 25 C 5 5 5 5 Maximum DC reverse current at c I A R rated DC blocking voltage per leg T = 100 C 500 500 500 500 c 1 C 300 300 300 300 pF Typical junction capacitance j Thermal characteristics 2 Typical thermal resistance R 1.9 1.9 1.9 1.9 C/W JC 1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C. 2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink 1 Oct. 2018 KBPC25005T/W thru KBPC2504T/W 2 Oct. 2018