M3P100A-160 GeneSiC Semiconductor

M3P100A-80 thru M3P100A-160 V = 800 V - 1600 V RRM Three Phase Silicon I = 100 A F Bridge Rectifier Features High Surge Capability Three Phase Package Types up to 1600 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified j Conditions M3P100A-80 M3P100A-160 Parameter Symbol Unit V 800 1600 RRepetitivepetitivee peakpeak revreveersrsee vvoltageoltage VV RRMRRM Non-repetitive peak reverse voltage V 880 1700 V RSM I T 103 C 100 100 Continuous forward current A F C Surge non-repetitive forward current, I T = 25 C, t = 8.3 ms 1200 1200 A FSM C p Half Sine Wave 2 2 2 6000 6000 ItI t A S T -55 to 150 -55 to 150 Operating temperature C j Storage temperature T -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions M3P100A-80 M3P100A-160 Unit V I = 100 A, T = 25 C 1.15 1.15 V Diode forward voltage F F j V = V T = 150 C Reverse current 10 10 mA R RRM, j Thermal characteristics Thermal resistance, junction - case R 0.22 0.22 C/W thJC 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/M3P100A-80 thru M3P100A-160 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/