M3P75A-80 thru M3P75A-160 V = 800 V - 1600 V RRM Silicon Standard I = 75 A F Recovery Diode Features Terminals and the mounting plate are electrically isolated Three Phase Package Types up to 1600 V V RRM Modules can be installed in the same cooling fin as other modules, thus saving installation space Diode chips are coated with a glass of zinc oxide, making them highly resistant to temperature and huminity variation 6 diode chips are connected to the 3-phase bridge rectifying circuit inside the module a cost effective feature Applications Inverters for AC motors Power supply units for DC motors DC power supply units for battery ch General purpose DC power supply u MMaximuaximumm rratatingsings,, atat TT = 2525 C,C, unleunlessss otheotherrwwisisee ssppeecifcifieiedd jj Parameter Symbol Conditions M3P75A-80 M3P75A-160 Unit T =25C, I =25 A Repetitive peak reverse voltage V 800 1600 V RRM J R V T =25C, I =25 A 880 1700 Non-repetitive peak reverse voltage V RSM J R T 103 C Continuous forward current I 75 75 A C F Surge non-repetitive forward current, I T = 25 C, t = 8.3 ms 1000 1000 A F,SM C p Half Sine Wave 2 2 2 4400 4400 ItI t A S Operating temperature T -40 to 150 -40 to 150 C j T -40 to 125 -40 to 125 Storage temperature C stg Tightening torque 252 252 kg-cm 55 Vibration resistance G Dielectric strength 2000 VAC 1 min 2000 VAC 1 min 133 133 Net weight g Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions M3P75A-80 M3P75A-160 Parameter Symbol Unit V I = 75 A, T = 25 C 1.15 1.15 V Diode forward voltage F F j V = V T = 150 C Reverse current 10 10 mA R RRM, j Thermal characteristics Thermal resistance, junction - case R 0.25 0.25 C/W thJC www.genesicsemi.com 1M3P75A-80 thru M3P75A-160 www.genesicsemi.com 2