MBR12020CT thru MBR12040CTR
V = 20 V - 40 V
RRM
Silicon Power
I = 120 A
F(AV)
Schottky Diode
Features
High Surge Capability Twin Tower Package
Types from 20 V to 40 V V
RRM
Not ESD Sensitive
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit
Repetitive peak
V 20 30 35 40 V
RRM
reverse voltage
V 25 28
RMS reverse voltage 14 21 V
RMS
V
DC blocking voltage 20 30 35 40 V
DC
Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C
j
T -55 to 150 -55 to 150
Storage temperature -55 to 150 -55 to 150 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions MBR12035CT(R) MBR12060CT(R)
Parameter Symbol MBR12020CT(R) MBR12030CT(R) Unit
Average forward
T = 125 C
I 120 120 120 120 A
C
F(AV)
current (per pkg)
Peak forward surge
I t = 8.3 ms, half sine
800 800 800 800 A
FSM p
current (per leg)
Maximum forward
V I = 60 A, T = 25 C 0.70 0.70 V
F FM j 0.70 0.70
voltage (per leg)
T = 25 C
11 11
j
Reverse current at
I T = 100 C
rated DC blocking 10 10 10 10 mA
R j
voltage (per leg)
T = 150 C
30 30 30 30
j
Thermal characteristics
Thermal resistance,
R 0.80 0.80 0.80 0.80 C/W
JC
junction-case, per leg
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR12020CT thru MBR12040CTR
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/