MBR3560R GeneSiC Semiconductor

MBR3545 thru MBR35100R V = 45 V - 100 V RRM Silicon Power I = 35 A F Schottky Diode Features High Surge Capability DO-4 Package Types from 45 V to 100 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit Repetitive peak reverse voltage V 45 60 80 100 V RRM V 57 70 RMS reverse voltage 32 42 V RMS DDCC blockingblocking vvoltageoltage VV 4545 6060 8080 100100 VV DCDC I T 110 C Continuous forward current 35 35 35 35 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 600 600 600 600 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR3580(R) MBR35100(R) Parameter Symbol MBR3545(R) MBR3560(R) Unit V I = 35 A, T = 25 C 0.84 0.84 V Diode forward voltage F F j 0.68 0.75 V = 20 V, T = 25 C 1.5 1.5 R j 1.5 1.5 I Reverse current mA R V = 20 V, T = 125 C 25 25 25 25 R j Thermal characteristics Thermal resistance, junction - R 1.5 1.5 1.5 1.5 C/W thJC case 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR3545 thru MBR35100R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/