MBR3545 thru MBR35100R
V = 45 V - 100 V
RRM
Silicon Power
I = 35 A
F
Schottky Diode
Features
High Surge Capability DO-4 Package
Types from 45 V to 100 V V
RRM
Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Repetitive peak reverse voltage V 45 60 80 100 V
RRM
V 57 70
RMS reverse voltage 32 42 V
RMS
DDCC blockingblocking vvoltageoltage VV 4545 6060 8080 100100 VV
DCDC
I T 110 C
Continuous forward current 35 35 35 35 A
F C
Surge non-repetitive forward
I T = 25 C, t = 8.3 ms
600 600 600 600 A
F,SM C p
current, Half Sine Wave
Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C
j
T -55 to 150 -55 to 150
Storage temperature -55 to 150 -55 to 150 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions MBR3580(R) MBR35100(R)
Parameter Symbol MBR3545(R) MBR3560(R) Unit
V I = 35 A, T = 25 C 0.84 0.84 V
Diode forward voltage F F j 0.68 0.75
V = 20 V, T = 25 C 1.5 1.5
R j 1.5 1.5
I
Reverse current mA
R
V = 20 V, T = 125 C 25 25
25 25
R j
Thermal characteristics
Thermal resistance, junction -
R 1.5 1.5 1.5 1.5 C/W
thJC
case
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR3545 thru MBR35100R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/