MBR8035 GeneSiC Semiconductor

MBR8020 thru MBR8040R V = 20 V - 40 V RRM Silicon Power I = 80 A F(AV) Schottky Diode Features High Surge Capability DO-5 Package Types from 20 V to 40 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit Repetitive peak reverse voltag V 20 30 35 40 V RRM V 25 28 RMS reverse voltage 14 21 V RMS DCDC blockingblocking vvoltageoltage VV 2020 3030 3535 4040 VV DCDC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit Average forward current (per I T = 125 C 80 80 80 80 A F(AV) C pkg) Peak forward surge current I t = 8.3 ms, half sine 1000 1000 1000 1000 A FSM p (per leg) Maximum forward voltage V I = 80 A, T = 25 C 0.75 0.75 V F FM j 0.75 0.75 (per leg) T = 25 C 11 11 j Maximum instantaneous I T = 100 C 10 10 reverse current at rated DC 10 10 mA R j blocking voltage (per leg) T = 150 C 20 20 20 20 j Thermal characteristics Thermal resistance, junction- R 0.50 0.50 0.50 0.50 C/W JC case (per leg) Inch ponds Mounting torque 30 30 30 30 (in-pb) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR8020 thru MBR8040R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/