MBRF40035R GeneSiC Semiconductor

MBRF40020 thru MBRF40040R V = 20 V - 40 V RRM Silicon Power I = 400 A F(AV) Schottky Diode Features High Surge Capability TO-244AB Package Types from 20 V to 40 V V R Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBRF40020(R) MBRF40030(R) MBRF40035(R) MBRF40040(R) Unit Repetitive peak reverse V 20 30 35 40 V RRM voltage V 25 28 RMS reverse voltage 14 21 V RMS V DC blocking voltage 20 30 35 40 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBRF40035(R) MBRF40040(R) Parameter Symbol MBRF40020(R) MBRF40030(R) Unit Average forward current T = 125 C I 400 400 400 400 A C F(AV) (per pkg) Peak forward surge current I t = 8.3 ms, half sine 3000 3000 3000 3000 A FSM p (per leg) Maximum forward voltage V I = 200 A, T = 25 C 0.70 0.70 0.70 0.70 V F FM j (per leg) T = 25 C 11 11 j Reverse current at rated DC I T = 100 C 10 10 10 10 mA R j blocking voltage (per leg) T = 150 C 50 50 50 50 j Thermal characteristics Thermal resistance, junction- R 0.35 0.35 0.35 0.35 C/W JC case (per leg) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBRF40020 thru MBRF40040R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/