MBRH12045 thru MBRH120100R V = 20 V - 100 V RRM Silicon Power I = 120 A F Schottky Diode Features High Surge Capability D-67 Package Types up to 100 V V RRM Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBRH12045 (R) MBRH12060 (R) MBRH12080 (R) MBRH120100 (R) Unit Repetitive peak reverse VV 4545 6060 8080 100100 VV RRM voltage V 56 70 RMS reverse voltage 32 42 V RMS V DC blocking voltage 45 60 80 100 V DC T 136 C Continuous forward current I 120 120 120 120 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 2000 2000 2000 2000 A F,SM C p current, Half Sine Wave Operating temperature T -40 to 175 -40 to 175 -40 to 175 -40 to 175 C j T -40 to 175 -40 to 175 Storage temperature -40 to 175 -40 to 175 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBRH12080 (R) MBRH120100 (R) Parameter Symbol MBRH12045 (R) MBRH12060 (R) Unit V I = 120 A, T = 25 C 0.84 0.84 V Diode forward voltage F F j 0.65 0.75 V = 20 V, T = 25 C 44 R j 44 I Reverse current mA R V = 20 V, T = 125 C 250 250 250 250 R j Thermal characteristics Thermal resistance, junction R 0.8 0.8 0.8 0.8 C/W thJC - case www.genesicsemi.com 1MBRH12045 thru MBRH120100R www.genesicsemi.com 2