MBRT120150R GeneSiC Semiconductor

MBRT120150 thru MBRT120200R V = 150 V - 200 V RRM Silicon Power I = 120 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 150 V to 200 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBRT120150(R) MBRT120200(R) Unit Repetitive peak reverse voltage V 150 V200 RRM V 141 RMS reverse voltage 106 V RMS DDCC blockingblocking vvoltageoltage VV 150150 200200 VV DCDC T -55 to 150 Operating temperature -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol ConditionsMBRT120150(R) UMBRT120200(R) nit Average forward current (per I T = 125 C 120 C 120 A F(AV) pkg) Peak forward surge current I t = 8.3 ms, half sine 800 800 A FSM p (per leg) Maximum instantaneous forward V I = 60 A, T = 25 C 0.92 V F FM j 0.88 voltage (per leg) T = 25 C 1 1 j Maximum instantaneous I T = 100 C 10 reverse current at rated DC 10 mA R j blocking voltage (per leg) T = 150 C 30 30 j Thermal characteristics Thermal resistance, junction- R 0.80 0.80 C/W JC case (per leg) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBRT120150 thru MBRT120200R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/