MBRT40045L GeneSiC Semiconductor

MBRT40045(R)L V = 45 V RRM Low V Silicon Power F I = 400 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Type 45 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Symbol Conditions Parameter MBRT40045(R)L Unit V Maximum recurrent peak reverse voltage 45 V RRM V Maximum RMS voltage 32 V RMS VV MMaxiimum DDCC blblockiking voltltage DC 4545 VV Operating temperature T -55 to 150 C j T Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT40045(R)L Unit I T = 100 C Average forward current (per pkg) 400 A F(AV) C Peak forward surge current (per leg) I t = 8.3 ms, half sine FSM p 3000 A Maximum instantaneous forward voltage (per V I = 200 A, Tj = 25 C V F FM 0.60 leg) Maximum instantaneous reverse T = 25 C 5 j current at rated DC blocking voltage I mA R T = 100 C 350 (per leg) j Thermal characteristics Maximum thermal resistance, R JC 0.35 C/W junction - case (per leg) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBRT40045(R)L 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/