MUR2520R GeneSiC Semiconductor

MUR2505 thru MUR2520R V = 50 V - 200 V RRM Silicon Super Fast I = 25 A F Recovery Diode Features High Surge Capability DO-4 Package Types from 50 V to 200 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. C A Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MUR2505 (R) MUR2510 (R) MUR2520 (R) Unit Repetitive peak reverse V 50 100 200 V RRM voltage V 140 RMS reverse voltage 35 70 V RMS DC blocking voltage V 50 100 200 V DC T 145 C Continuous forward current I 25 25 25 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 500 500 500 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MUR2520 (R) Parameter Symbol MUR2505 (R) MUR2510 (R) Unit V I = 25 A, T = 25 C 1 V Diode forward voltage F F j 1 1 V = 50 V, T = 25 C 10 R j 10 10 A I Reverse current R V = 50 V, T = 125 C 3 3 3 mA R j Recovery Time I =0.5 A, I =1.0 A, Maximum reverse recovery F R T 75 75 75 ns RR time I = 0.25 A RR 1 Oct. 2018 A C C A Stud Stud (R) MUR2505 thru MUR2520R 2 Oct. 2018