MUR5060 GeneSiC Semiconductor

MUR5040 thru MUR5060R V = 400 V - 600 V RRM Silicon Super Fast I = 50 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 400 V to 600 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MUR5040 (R) MUR5060 (R) Unit Repetitive peak reverse V 400 600 V RRM voltage V 420 RMS reverse voltage 280 V RMS DC blocking voltage V 400 600 V DC T 125 C Continuous forward current I 50 50 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 600 600 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MUR5060 (R) Parameter Symbol MUR5040 (R) Unit V I = 50 A, T = 25 C 1.7 V Diode forward voltage F F j 1.3 V = 50 V, T = 25 C 10 R j 10 A I Reverse current R V = 50 V, T = 125 C 3 3 mA R j Recovery Time I =0.5 A, I =1.0 A, Maximum reverse recovery F R T 90 75 ns RR time I = 0.25 A RR 1 Oct. 2018 A C C A Stud Stud (R) MUR5040 thru MUR5060R 2 Oct. 2018