MUR7020R GeneSiC Semiconductor

MUR7005 thru MUR7020R V = 50 V - 200 V RRM Silicon Super Fast I = 70 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 50 V to 200 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MUR7005 (R) MUR7010 (R) MUR7020 (R) Unit Repetitive peak reverse V 50 100 200 V RRM voltage RMS reverse voltage V 35 70 140 V RMS V DC blocking voltage 50 100 200 V DC T 125 C Continuous forward current I 70 70 70 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 1000 1000 1000 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MUR7020 (R) Parameter Symbol MUR7005 (R) MUR7010 (R) Unit V = 70 A, T = 25 C Diode forward voltage I 1 1 1 V F F j V = 50 V, T = 25 C 25 R j 25 25 A I Reverse current R V = 50 V, T = 125 C 3 33 mA R j Recovery Time I =0.5 A, I =1.0 A, Maximum reverse recovery F R T 75 75 75 ns RR time I = 0.25 A RR 1 www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/MUR7005 thru MUR7020R 2 www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/