MURF10060 GeneSiC Semiconductor

MURF10005 thru MURF10020R V = 50 V - 200 V RRM Silicon Super Fast I = 100 A F(AV) Recovery Diode Features High Surge Capability TO-244 Package Types from 50 V to 200 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MURF10005(R) MURF10010(R) MURF10020(R) Unit Repetitive peak reverse voltage V 50 100 200 V RRM RMS reverse voltage V 35 70 140 V RMS V DC blocking voltage 50 100 200 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MURF10020(R) Parameter Symbol MURF10005(R) MURF10010(R) Unit Average forward current (per T = 140 C I 100 100 100 A C F(AV) pkg) Peak forward surge current (per I t = 8.3 ms, half sine 1500 p 1500 1500 A FSM leg) Maximum instantaneous V I = 50 A, T = 25 C 1.0 1.0 1.0 V F FM j forward voltage (per leg) Maximum reverse current at T = 25 C 25 25 25 A j I rated DC blocking voltage (per R T = 125 C 33 3 mA j leg) I =0.5 A, I =1.0 A, Maximum reverse recovery time F R T 75 75 75 nS rr (per leg) I = 0.25 A RR Thermal characteristics Maximum thermal resistance, R 1.00 1.00 1.00 C/W JC junction - case (per leg) 1 www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/MURF10005 thru MURF10020R 2 www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/