S150JR GeneSiC Semiconductor

S150J thru S150QR V = 600 V - 1200 V RRM Silicon Standard I =150 A F Recovery Diode Features High Surge Capability DO-8 Package Types from 600 V to 1200 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions S150J (R) S150K (R) S150M (R) S150Q (R) Unit Repppetitive peak reverse voltagge V 600 800 1000 1200 V RRM V 700 840 RMS reverse voltage 420 560 V RMS V 600 800 1000 1200 V DC blocking voltage DC I T 180 C Continuous forward current 150 150 150 150 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 3140 3140 3140 3140 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S150M (R) S150Q (R) Parameter Symbol S150J (R) S150K (R) Unit V I = 150 A, T = 25 C 1.2 1.2 V Diode forward voltage F F j 1.2 1.2 V = 600 V, T = 25 C 10 10 R j 10 10 A I Reverse current R V = 600 V, T = 150 C 15 9 15 15 mA R j Thermal characteristics Thermal resistance, junction - R 0.35 0.35 0.35 0.35 C/W thJC case 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/S150J thru S150QR 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/