S300B GeneSiC Semiconductor

S300B thru S300JR V = 100 V - 600 V RRM Silicon Standard I = 300 A F Recovery Diode Features High Surge Capability DO-9 Package Types up to 600 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S300J (R) Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit Repetitive peak reverse V 600 100 200 300 400 V RRM voltage RMS reverse voltage V 70 140 212 280 420 V RMS V 600 DC blocking voltage 100 200 300 400 V DC Continuous forward I T 130 C 300 300 300 300 300 A F C current Surge non-repetitive I T = 25 C, t = 8.3 ms forward current, Half Sine 6850 6850 6850 6850 6850 A F,SM C p Wave T -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions S300B (R) S300D (R) S300E (R) S300G (R) S300J (R) Unit V I = 300 A, T = 25 C 1.2 V Diode forward voltage 1.2 1.2 1.2 1.2 F F j V = 100 V, T = 25 C 10 10 10 10 10 A R j I Reverse current R V = 100 V, T = 175 C 12 12 12 12 12 mA R j Thermal characteristics Thermal resistance, R 0.16 0.16 0.16 0.16 0.16 C/W thJC junction - case 1 Oct. 2018 C A A C Stud Stud (R) S300B thru S300JR 2 Oct. 2018