S300ZR GeneSiC Semiconductor

S300Y thru S300ZR V = 1600 V - 2000 V RRM Silicon Standard I =300 A F Recovery Diode Features High Surge Capability DO-9 Package Types from 1600 V to 2000 V V RRM Not ESD Sensitive Note: A C 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S300Y (R) S300Z (R) Parameter Symbol Unit Repetitive peak reverse voltage V 1600 2000 V RRM V RMS reverse voltage 1131 1414 V RMS V 1600 2000 DC blocking voltage V DC T 130 C Continuous forward current I 300 300 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 6850 6850 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S300Y (R) S300Z (R) Parameter Symbol Unit V I = 300 A, T = 25 C 1.2 1.2 V Diode forward voltage F F j V = 1600 V, T = 25 C 10 10 A R j I Reverse current R V = 1600 V, T = 175 C 12 12 mA R j Thermal characteristics Thermal resistance, junction - R 0.16 0.16 C/W thJC case 1 Oct. 2018 A C C A Stud Stud (R) S300Y thru S300ZR 2 Oct. 2018