S320Q GeneSiC Semiconductor

S320J thru S320QR V = 600 V - 1200 V RRM Silicon Standard I = 320 A F Recovery Diode Features High Surge Capability DO-9 Package Types from 600 V to 1200 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. C A Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S320M (R) S320Q (R) Parameter Symbol S320J (R) S320K (R) Unit Repetitive peak reverse voltage V 600 800 1000 1200 V RRM V RMS reverse voltage 420 566 707 848 V RMS V 1000 1200 DC blocking voltage 600 800 V DC T 100 C Continuous forward current I 320 320 320 320 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 4700 4700 4700 4700 A F,SM C p current, Half Sine Wave T -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S320M (R) S320Q (R) Parameter Symbol S320J (R) S320K (R) Unit V I = 300 A, T = 25 C 1.2 1.2 V Diode forward voltage F F j 1.2 1.2 V = 600 V, T = 25 C 10 10 10 10 A R j I Reverse current R V = 600 V, T = 175 C 12 12 12 12 mA R j Thermal characteristics Thermal resistance, junction - R 0.16 0.16 0.16 0.16 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) S320J thru S320QR 2 Oct. 2018