S400K GeneSiC Semiconductor

S400K thru S400YR V = 800 V - 1600 V RRM Silicon Standard I = 400 A Recovery Diode F Features High Surge Capability DO-9 Package Types from 800 V to 1600 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S400K (R) S400Q (R) S400Y (R) Parameter Symbol Unit V 800 1200 1600 Repetitive peak reverse voltage V RRM RMS reverse voltage V 566 848 1131 V RMS V DC blocking voltage 800 1200 1600 V DC T 120 C I 400 400 400 Continuous forward current C A F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 8640 8640 8640 A F,SM C p current, Half Sine Wave T Operating temperature -55 to 150 -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions S400K (R) S400Q (R) S400Y (R) Unit V I = 400 A, T = 25 C Diode forward voltage 1.2 1.2 1.2 V F F j V = 50 V, T = 25 C 10 10 10 A R j Reverse current I R V = 50 V, T = 175 C 12 12 12 mA R j Thermal characteristics Thermal resistance, junction - R 0.14 0.14 0.14 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) S400K thru S400YR 2 Oct. 2018