S40Q GeneSiC Semiconductor

S40K thru S40QR V = 800 V - 1200 V RRM Silicon Standard I = 40 A F Recovery Diode Features High Surge Capability Types from 800 V to 1200 V V DO-5 Package RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S40K (R) S40M (R) S40Q (R) Parameter Symbol Unit Repetitive peak reverse voltage V 800 1000 1200 V RRM V RMS reverse voltage 560 700 840 V RMS V 800 1000 1200 DC blocking voltage V DC T 140 C Continuous forward current I 40 40 40 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 595 595 595 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S40K (R) S40M (R) S40Q (R) Parameter Symbol Unit V I = 40 A, T = 25 C 1.1 1.1 1.1 V Diode forward voltage F F j V = 100 V, T = 25 C 10 10 10 A R j I Reverse current R V = 100 V, T = 190 C 9 9 9 mA R j Thermal characteristics Thermal resistance, junction - R 1.25 1.25 1.25 C/W thJC case 1 Oct. 2018 A C C A Stud Stud (R) S40K thru S40QR 2 Oct. 2018