S6M GeneSiC Semiconductor

S6K thru S6QR V = 800 V - 1200 V RRM Silicon Standard I = 6 A F Recovery Diode Features High Surge Capability DO-4 Package Types from 800 V to 1200 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S6K (R) S6M (R) S6Q (R) Parameter Symbol Unit Repetitive peak reverse voltage V 800 1000 1200 V RRM V RMS reverse voltage 560 700 840 V RMS V 800 1000 1200 DC blocking voltage V DC T 160 C Continuous forward current I 6 6 6 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 167 167 167 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S6K (R) S6M (R) S6Q (R) Parameter Symbol Unit V I = 6 A, T = 25 C 1.1 1.1 1.1 V Diode forward voltage F F j V = 100 V, T = 25 C 10 10 10 A R j I Reverse current R V = 100 V, T = 175 C 12 12 12 mA R j Thermal characteristics Thermal resistance, junction - R 2.50 2.50 2.50 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) S6K thru S6QR 2 Oct. 2018