W10M GeneSiC Semiconductor

W06M thru W10M V = 600 V - 1000 V RRM Single Phase Silicon I = 1.5 A O Bridge Rectifier Features Ideal for printed circuit board Low forward voltage drop WOM Package Low leakage current Types from 600 V up to 1000 V VRRM Not ESD Sensitive Mechanical Data Case: Molded plastic body Terminals: Plated leads, solderable per MIL-STD-202 Method 208 guaranteed Polarity: Color band on body denotes cathode end Mounting position: Any Weight: 1.07 grams Maximum ratings at Tc = 25 C, unless otherwise specified Parameter Symbol Conditions W06M W08M W10M Unit V Repetitive peak reverse voltage 600 800 1000 V RRM V 700 RMS reverse voltage 420 560 V RMS DC blocking voltage V 600 800 1000 V DC T -65 to 125 Operating temperature -65 to 125 -65 to 125 C j T -65 to 150 Storage temperature -65 to 150 -65 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions W06M W08M W10M Unit Maximum average forward T = 50 C I 1.5 1.5 1.5 A a O rectified current t = 8.3 ms, half sine I 50 Peak forward surge current p 50 50 A FSM Maximum instantaneous forward V I = 1.0 A 1.0 1.0 1.0 V F F voltage drop per bridge element T = 25 C 10 Maximum DC reverse current at 10 10 a I A R rated DC blocking voltage T = 100 C 500 500 500 a 1 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/W06M thru W10M 2 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/