The 1N5059 is a 1,500 volt, 5 Amp Insulated Gate Bipolar Transistor (IGBT) manufactured by Genteq. It is a single-ended transistor, featuring a maximum collector current of 5A, a collector-emitter breakdown voltage of 1,500V, and a Vcesat of 0.78V. Its optimal operating temperature range is from -55°C to 125°C, giving it a wide range of applications. Its maximum power dissipation is 25W, and it has an average gate trigger current of 1mA.