Data Sheet
GHIS080A120S-A2
Buck Chopper with
V =1200V
CES
0
Field Stop Trench IGBT + SiC SBD
I = 80A @T = 100 C
C C
Features
A
E
Field StopTrench Fast IGBT
C
- Low voltage drop
G
- Low tail current
- Switching frequency up to 50 kHz
- Low leakage current
Chopper SiC Schottky Diode
- Zero reverse recovery current
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Applications
Solar inverters
AC and DC motor control
Power Factor Correction
Aerospace Actuators
Benefits
Outstanding performance at high frequency operation
Low switching losses
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
o
Absolute Maximum Ratings (T =25 C unless otherwise specified)
j
Parameters Symbol Conditions Specifications Units
Collector - Emitter Breakdown Voltage V 1200 V
CES
0
Continuous Collector Current I T = 25 C 160 A
C C
0
T = 100 C 80 A
C
V
Gate-Emitter Voltage
GES
20 V
Pulsed Collector Current ICM 240 A
0
Maximum Power Dissipation P T = 25 C 480 W
D C
0
T = 100 C 200 W
C
0
Operating Junction Temperature T -55 ~ 150 C
J
0
Storage Temperature T -55 ~ 150 C
STG
Page 1 of 8 Rev. 1.1 08/02/2018 Data Sheet
GHIS080A120S-A2
o
Electrical Characteristics (T=25 C unless otherwise specified)
j
Parameters Symbol Conditions Min Typ Max Units
OFF
Zero Gate Voltage Collector Current I V = 1200V, V = 0V -- -- 2 mA
CES CE GE
Gate-Emitter Leakage Current I V = 0V, V = 20V -- -- nA
GES CE GE 500
ON
Gate-Emitter Threshold Voltage V V = V , I = 80mA 4.5 6.5 V
GE(TH) GE CE C 8.5
0
Collector-Emitter Saturation Voltage V V = 15V, I = 80A, T = 25 C -- 2.0 2.6 V
CE(SAT) CE C J
0
V = 15V, I = 80A, T = 125 C -- 2.45 -- V
CE C J
DYNAMIC
C
Input Capacitance IES V = 30V, V = 0V, f = 1 MHz -- --
CE GE
10.3 nF
C
Output Capacitance OES -- 300 --
pF
C
Reverse Transfer Capacitance -- 200 --
RES
pF
SWITCHING
t
Turn-On Delay Time d(on) -- 60 --
ns
t
Rise Time -- 85 --
r
ns
V = 600V, I =80A
CE C
t
Turn-Off Delay Time d(off) R = 10, V = 15V -- 200 --
G GE ns
0
Inductive Load, T =25 C
J
t
Fall Time -- 60 --
f
ns
E
Turn-On Switching Energy Loss ON -- 7.1 --
mJ
E
Turn-Off Switching Energy Loss -- 1.2 --
OFF
mJ
t
Turn-On Delay Time d(on) -- 50 --
ns
t
Rise Time r -- 80 --
ns
V = 600V, I =80A
CE C
Turn-Off Delay Time t -- 210 --
d(off) R = 10, V = 15V
ns
G GE
0
Inductive Load, T =125 C
J
t
Fall Time f -- 120 --
ns
E
Turn-On Switching Energy Loss -- 7.6 --
ON
mJ
E
Turn-Off Switching Energy Loss OFF -- 2.4 --
mJ
Q
Total Gate Charge g V = 600V, I =80A -- 640 960
CE C
nC
V = 15V
GE
Q
Gate-Emitter Charge -- 80 120
ge
nC
Q
Gate-Collector Charge gc -- 300 450
nC
t
Short Circuit Withstanding Time V = 600V, V = 15V -- -- 10
sc CE GE
s
0
T =125 C
J
Page 2 of 8 Rev. 1.1 08/02/2018