GP2D003A065A
VDC 650 V
Q 7 nC
C
I 3 A
F
650V SiC Schottky Diode
TM TM TM
Amp+ Features Amp+ Benefits Amp+ Applications
High surge current capable Unipolar rectifier Motor drives
Zero reverse recovery current Zero switching loss Switch mode power supplies
High bandwidth Higher efficiency Power factor correction
Fast, temperature-independent switching Smaller heat sink
Parallel devices with thermal stability
Part # Package Marking
GP2D003A065A TO-220-2L 2D003A065
Maximum Rating Symbol Conditions Value Unit
T =25 C, T =175 C
C j
10
I T =125 C, T =175 C
Continuous forward current
F C j
5
T =150 C, T =175 C
C j
3
A
T =25 C, t =8.3 ms 24
Surge non-repetitive forward current C p
I
F,SM
sine halfwave
T =150 C, t =8.3 ms 15
C p
Non-repetitive peak forward current I T =25 C, t =10 ms
F,max C p 60
T =25 C, t =8.3 ms
C p
2
2 2 2
i t value i dt A s
T =150 C, t =8.3 ms
C p
1
T =25 C
Repetitive peak reverse voltage V 650 V
RRM j
Turn-on slew rate, repetitive
Diode dv/dt ruggedness dv/dt 50 V/ns
Power dissipation P T =25 C 36 W
C
tot
Operating & storage temperature T , T Continuous -55175
C
J storage
Soldering temperature T Wave soldering leads
C
solder 260
Mounting torque M3 Screw
N-m
1
Electrical Characteristics, at T =25 C, unless otherwise specified
j
Values
Static Characteristics Symbol Conditions Unit
min. typ. max.
DC blocking voltage V I =0.1mA
R 650 - -
DC
o
V
I =3A, T =25 C - 1.45 1.65
F j
Diode forward voltage V
F
o
I =3A, T =175 C - 1.65 2.00
F j
o
V =650V, T =25 C - 3.0 30
R j
Reverse current I
mA
R
o
V =650V, T =175 C - 50 300
R j
8/27/2015 Rev 2 www.gptechgroup.com p.1TM
650V SiC Schottky Diode Amp + GP2D003A065A
Values
Parameter Symbol Conditions Unit
min. typ. max.
AC Characteristics
o
Total capacitive charge Q
V =650V, T =25 C - 7 - nC
C
R j
di /dt=200 A/ ms
F
Switching time t - - <10 ns
C
T =150 C
j
V =1 V, f=1 MHz - 158 -
R
Total capacitance C V =325V, f=1 MHz - 13 - pF
R
V =650V, f=1 MHz
R - 11 -
Thermal Characteristics
o
Thermal resistance, junction-case R Package (flange) mount
- 4.18 - C/W
thJC
Typical Performance
Fig. 2 Reverse Characteristics (parameterized on Tj)
Fig. 1 Forward Characteristics (parameterized on T )
j
1.E-02
25C 25C
4
1.E-03
75C 75C
1.E-04 125C
125C
3
175C 175C
1.E-05
2
1.E-06
1.E-07
1
1.E-08
0 1.E-09
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600
V (V) V (V)
F R
Fig. 3 Power Derating Fig. 4 Current Derating
40 35
o o
100%
T =175 C T =175 C Duty cycle
j
j
35
30
50%
30
25 30%
25
20%
20
10%
20
15
15
10
10
5
5
0 0
25 75 125 175 25 75 125 175
o o
T ( C) T ( C)
C C
8/27/2015 Rev 2 www.gptechgroup.com p.2
P (W) I (A)
Total F
I (A) I (A)
F R